BSS131H6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 240V 110MA SOT23-3
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09560
6,000+
$0.08680
15,000+
$0.07800
30,000+
$0.07360
75,000+
$0.06612
150,000+
$0.06392
Exquisite packaging
Discount
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BSS131H6327XTSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSS131H6327XTSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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