BSS84WQ-7-F
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT323
$0.44
Available to order
Reference Price (USD)
3,000+
$0.10246
6,000+
$0.09729
15,000+
$0.08954
30,000+
$0.08437
75,000+
$0.07661
150,000+
$0.07520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BSS84WQ-7-F, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
Toshiba Semiconductor and Storage
TJ90S04M3L,LXHQ
Diodes Incorporated
ZVNL120A
STMicroelectronics
STD30NF06T4
Fairchild Semiconductor
FDU6682
Vishay Siliconix
SI2371EDS-T1-GE3
UnitedSiC
UF3C120080B7S
Nexperia USA Inc.
BUK7Y25-80EX
Vishay Siliconix
SIHA4N80E-GE3
STMicroelectronics
STF13NM60ND
onsemi