BST52,135
Nexperia USA Inc.

Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
$0.71
Available to order
Reference Price (USD)
4,000+
$0.23635
8,000+
$0.22820
Exquisite packaging
Discount
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Optimize your designs with BST52,135 by Nexperia USA Inc., a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, BST52,135 is the perfect fit. Contact us today to learn more and place your order with Nexperia USA Inc..
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.3 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89