BSV236SPH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 20V 1.5A SOT363-6
$0.59
Available to order
Reference Price (USD)
3,000+
$0.15539
6,000+
$0.14686
15,000+
$0.13834
30,000+
$0.12811
75,000+
$0.12385
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSV236SPH6327XTSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSV236SPH6327XTSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 560mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-PO
- Package / Case: 6-VSSOP, SC-88, SOT-363
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