BSZ037N06LS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 18A/40A TSDSON
$1.82
Available to order
Reference Price (USD)
1+
$1.82000
500+
$1.8018
1000+
$1.7836
1500+
$1.7654
2000+
$1.7472
2500+
$1.729
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with BSZ037N06LS5ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BSZ037N06LS5ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
Related Products
Harris Corporation
IRFR420
Rectron USA
RM3401Y
Panjit International Inc.
PJP60R620E_T0_00001
Nexperia USA Inc.
NX7002AKVL
Rectron USA
RM2A3P60S4
Microchip Technology
APT44F80B2
STMicroelectronics
STP15N80K5
Infineon Technologies
IPI80P03P4-05AKSA1
Toshiba Semiconductor and Storage
TK31V60W,LVQ
Diodes Incorporated