BSZ0704LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 11A/40A TSDSON
$0.97
Available to order
Reference Price (USD)
1+
$0.97000
500+
$0.9603
1000+
$0.9506
1500+
$0.9409
2000+
$0.9312
2500+
$0.9215
Exquisite packaging
Discount
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Optimize your electronic systems with BSZ0704LSATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BSZ0704LSATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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