BSZ42DN25NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 250V 5A TSDSON-8
$1.68
Available to order
Reference Price (USD)
5,000+
$0.49025
10,000+
$0.47182
Exquisite packaging
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Infineon Technologies presents BSZ42DN25NS3GATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BSZ42DN25NS3GATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 33.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-2
- Package / Case: 8-PowerTDFN
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