BTS282ZE3230AKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 49V 80A TO220-7
$7.25
Available to order
Reference Price (USD)
1+
$5.95000
10+
$5.31400
100+
$4.35780
500+
$3.52874
1,000+
$2.97605
Exquisite packaging
Discount
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Enhance your circuit performance with BTS282ZE3230AKSA2, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BTS282ZE3230AKSA2 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 49 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id: 2V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-7-12
- Package / Case: TO-220-7
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