BUJ106A,127
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJ106A - POWER BIPOL
$0.47
Available to order
Reference Price (USD)
5,000+
$0.39200
Exquisite packaging
Discount
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Boost your electronic applications with BUJ106A,127 from NXP USA Inc., a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, BUJ106A,127 guarantees performance and longevity. Interested? Send us an inquiry and let NXP USA Inc. support your next project.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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