BUJ302A,127
NXP USA Inc.

NXP USA Inc.
NOW WEEN - BUJ302A - POWER BIPOL
$0.33
Available to order
Reference Price (USD)
5,000+
$0.28350
Exquisite packaging
Discount
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Trust BUJ302A,127 by NXP USA Inc. for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, BUJ302A,127 ensures reliability. Get in touch today to request a quote and see why NXP USA Inc. is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
- Current - Collector Cutoff (Max): 250mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB