BUJ302AD,118
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJ302AD - POWER BIPO
$0.33
Available to order
Reference Price (USD)
2,500+
$0.30450
5,000+
$0.28350
12,500+
$0.28000
Exquisite packaging
Discount
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Optimize your designs with BUJ302AD,118 by NXP USA Inc., a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, BUJ302AD,118 is the perfect fit. Contact us today to learn more and place your order with NXP USA Inc..
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
- Current - Collector Cutoff (Max): 250mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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