BUJ302AX,127
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJ302AX - POWER BIPO
$0.33
Available to order
Reference Price (USD)
5,000+
$0.28350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic projects with BUJ302AX,127 by NXP USA Inc., a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, BUJ302AX,127 provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the NXP USA Inc. difference.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
- Power - Max: 26 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: TO-220F
Related Products
Microchip Technology
JAN2N3637L
onsemi
MPS4124RLRAG
Panjit International Inc.
PBHV8110DW-AU_R2_000A1
Nexperia USA Inc.
2PC4081Q,135
Diodes Incorporated
FZT491TA
Diodes Incorporated
ZXTN25012EZTA
Diodes Incorporated
ZXTS1000E6TA
Diodes Incorporated
2DA1213Y-13
Sanken
2SC4131
Diodes Incorporated