BUJ303B,127
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJ303B - POWER BIPOL
$0.36
Available to order
Reference Price (USD)
5,000+
$0.31185
Exquisite packaging
Discount
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Upgrade your electronic projects with BUJ303B,127 by NXP USA Inc., a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, BUJ303B,127 provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the NXP USA Inc. difference.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 23 @ 800mA, 3V
- Power - Max: 100 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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