BUJD103AD,118
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJD103AD - POWER BIP
$0.33
Available to order
Reference Price (USD)
7,500+
$0.28350
Exquisite packaging
Discount
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Choose BUJD103AD,118 by NXP USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BUJD103AD,118 is a versatile solution. Ready to order? Submit your inquiry today and let NXP USA Inc. provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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