BUK662R5-30C,118
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK662R5-30C - 100A, 30
$0.48
Available to order
Reference Price (USD)
1+
$1.09000
10+
$0.92500
100+
$0.77620
Exquisite packaging
Discount
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Experience the power of BUK662R5-30C,118, a premium Transistors - FETs, MOSFETs - Single from NXP Semiconductors. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BUK662R5-30C,118 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 204W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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