BUK6E2R3-40C,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK6E2R3-40C - 120A, 40
$0.89
Available to order
Reference Price (USD)
1+
$0.89000
500+
$0.8811
1000+
$0.8722
1500+
$0.8633
2000+
$0.8544
2500+
$0.8455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of BUK6E2R3-40C,127, a premium Transistors - FETs, MOSFETs - Single from NXP Semiconductors. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BUK6E2R3-40C,127 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Renesas Electronics America Inc
N0300P-T1B-AT
Infineon Technologies
IRFB4332PBF
onsemi
FQPF22P10
Texas Instruments
CSD13202Q2
Vishay Siliconix
IRFZ48PBF
Infineon Technologies
IRLR2905ZPBF
STMicroelectronics
STL30N10F7
Fairchild Semiconductor
FQA13N50C
Infineon Technologies
AUIRF1405ZSTRL
Fairchild Semiconductor