BUK6E3R2-55C,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK6E3R2-55C - 120A, 55
$0.97
Available to order
Reference Price (USD)
1+
$0.97000
500+
$0.9603
1000+
$0.9506
1500+
$0.9409
2000+
$0.9312
2500+
$0.9215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BUK6E3R2-55C,127, a versatile Transistors - FETs, MOSFETs - Single solution from NXP Semiconductors, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
NTMFS5C442NLTT1G
Renesas Electronics America Inc
BB504CDS-TL-H
Nexperia USA Inc.
PSMN9R0-25MLC,115
Nexperia USA Inc.
PSMN2R5-30YL,115
IXYS
IXFK170N10
Rohm Semiconductor
RTR030N05HZGTL
Infineon Technologies
IPB180N04S4H0ATMA1
Infineon Technologies
AUIRFN7110TR
Fairchild Semiconductor
SFU9220TU
Nexperia USA Inc.