BUK7E13-60E,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 60V 58A I2PAK
$0.33
Available to order
Reference Price (USD)
1+
$1.13000
50+
$0.90220
100+
$0.78940
500+
$0.61216
1,000+
$0.48329
Exquisite packaging
Discount
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BUK7E13-60E,127 by NXP USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BUK7E13-60E,127 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 96W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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