BUK7S0R7-40HJ
Nexperia USA Inc.

Nexperia USA Inc.
MOSFET N-CH 40V 425A LFPAK88
$6.43
Available to order
Reference Price (USD)
1+
$6.43000
500+
$6.3657
1000+
$6.3014
1500+
$6.2371
2000+
$6.1728
2500+
$6.1085
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BUK7S0R7-40HJ by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BUK7S0R7-40HJ inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 425A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 375W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK88 (SOT1235)
- Package / Case: SOT-1235