BUK7S1R0-40HJ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 325A LFPAK88
$4.41
Available to order
Reference Price (USD)
1+
$4.41000
500+
$4.3659
1000+
$4.3218
1500+
$4.2777
2000+
$4.2336
2500+
$4.1895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance BUK7S1R0-40HJ from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BUK7S1R0-40HJ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 325A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 10322 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 375W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK88 (SOT1235)
- Package / Case: SOT-1235
Related Products
Toshiba Semiconductor and Storage
TK14A55D(STA4,Q,M)
GeneSiC Semiconductor
GA10SICP12-263
Diodes Incorporated
DMTH3002LK3-13
Taiwan Semiconductor Corporation
TSM300NB06CR RLG
Infineon Technologies
IPF05N03LAG
Nexperia USA Inc.
BSH205G2VL
Infineon Technologies
BSZ0901NSATMA1
onsemi
NTMFS4955NT3G
onsemi
MMSF2P02ER2
onsemi