BUK7S1R2-40HJ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 300A LFPAK88
$3.75
Available to order
Reference Price (USD)
1+
$3.75000
500+
$3.7125
1000+
$3.675
1500+
$3.6375
2000+
$3.6
2500+
$3.5625
Exquisite packaging
Discount
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Experience the power of BUK7S1R2-40HJ, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BUK7S1R2-40HJ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 294W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK88 (SOT1235)
- Package / Case: SOT-1235
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