BUK7Y20-30B,115
NXP Semiconductors
NXP Semiconductors
MOSFET N-CH 30V 39.5A LFPAK56
$0.23
Available to order
Reference Price (USD)
1,500+
$0.26853
Exquisite packaging
Discount
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Experience the power of BUK7Y20-30B,115, a premium Transistors - FETs, MOSFETs - Single from NXP Semiconductors. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BUK7Y20-30B,115 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 39.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 688 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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