BUK962R8-60E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
$3.31
Available to order
Reference Price (USD)
800+
$1.38171
1,600+
$1.26803
2,400+
$1.18058
5,600+
$1.13685
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BUK962R8-60E,118 by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BUK962R8-60E,118 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 324W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Renesas Electronics America Inc
N0300N-T1B-AT
Toshiba Semiconductor and Storage
TK560P65Y,RQ
onsemi
NTMJS0D8N04CLTWG
IXYS
IXTK140N20P
Alpha & Omega Semiconductor Inc.
AON6516
Vishay Siliconix
SIHP21N60EF-GE3
Diodes Incorporated
DMNH10H028SK3Q-13
IXYS
IXTP2R4N120P
Taiwan Semiconductor Corporation
TSM7P06CP ROG
Toshiba Semiconductor and Storage