BUK965R8-100E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 120A D2PAK
$3.81
Available to order
Reference Price (USD)
800+
$1.53813
1,600+
$1.41158
2,400+
$1.31423
5,600+
$1.26555
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Nexperia USA Inc. presents BUK965R8-100E,118, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BUK965R8-100E,118 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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