BUK9675-100A,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 23A D2PAK
$1.64
Available to order
Reference Price (USD)
800+
$0.49303
1,600+
$0.44550
2,400+
$0.41580
5,600+
$0.39501
20,000+
$0.38016
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with BUK9675-100A,118, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BUK9675-100A,118 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
IRF740APBF-BE3
Fairchild Semiconductor
HUF76423S3ST
Vishay Siliconix
SIA413DJ-T1-GE3
Renesas Electronics America Inc
NP90N04VUK-E1-AY
Renesas Electronics America Inc
2SK2329L-E
Vishay Siliconix
SIR402DP-T1-GE3
IXYS
IXTH110N25T
Vishay Siliconix
SI7465DP-T1-GE3
Infineon Technologies
IRF8010STRLPBF
Vishay Siliconix