BUK9Y3R5-40E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
$1.56
Available to order
Reference Price (USD)
1,500+
$0.49533
3,000+
$0.46231
7,500+
$0.43919
10,500+
$0.42268
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BUK9Y3R5-40E,115, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30.2 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 5137 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
IXYS
IXFH50N20
Infineon Technologies
IRLML6302TRPBF
STMicroelectronics
STP80NF55-08AG
Infineon Technologies
IPP60R070CFD7XKSA1
Infineon Technologies
IPD60R210CFD7ATMA1
Vishay Siliconix
IRF9530STRRPBF
Fairchild Semiconductor
NDB603AL
Infineon Technologies
IPP60R099P6XKSA1
Alpha & Omega Semiconductor Inc.
AOI21357
Microchip Technology