BUK9Y65-100E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 19A LFPAK56
$0.85
Available to order
Reference Price (USD)
1,500+
$0.27949
3,000+
$0.25329
7,500+
$0.23582
10,500+
$0.22708
37,500+
$0.22232
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with BUK9Y65-100E,115, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BUK9Y65-100E,115 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 63.3mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1523 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 64W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IRFS3307ZTRRPBF
Infineon Technologies
IPP80R900P7XKSA1
Microchip Technology
LND150K1-G
Nexperia USA Inc.
PSMN016-100YS,115
Panjit International Inc.
PJQ5426_R2_00001
Infineon Technologies
BSZ058N03MSGATMA1
Infineon Technologies
IRF1018EPBF
Vishay Siliconix
SQ2337ES-T1_BE3
Taiwan Semiconductor Corporation
TSM7NC65CF C0G
Fairchild Semiconductor