BYG10J-E3/TR3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.5A
$0.11
Available to order
Reference Price (USD)
7,500+
$0.11089
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-level performance with Vishay General Semiconductor - Diodes Division's BYG10J-E3/TR3 Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Vishay General Semiconductor - Diodes Division stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Nexperia USA Inc.
PMEG4010CEGWX
Micro Commercial Co
SK16-TP
Vishay General Semiconductor - Diodes Division
RMPG06DHE3_A/54
Rohm Semiconductor
RB068VWM-60TFTR
Yangzhou Yangjie Electronic Technology Co.,Ltd
SL16-F1-3000HF
Rohm Semiconductor
RB160VAM-60TR
Infineon Technologies
SDT05S60
SMC Diode Solutions
FR154G
Taiwan Semiconductor Corporation
RS1ML
Vishay General Semiconductor - Diodes Division