BYG10M-E3/TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A
$0.41
Available to order
Reference Price (USD)
1,800+
$0.12647
3,600+
$0.11712
5,400+
$0.11089
12,600+
$0.10466
45,000+
$0.10155
Exquisite packaging
Discount
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Boost your electronic designs with BYG10M-E3/TR Single Rectifier Diodes by Vishay General Semiconductor - Diodes Division, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Vishay General Semiconductor - Diodes Division has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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