BYG23M-M3/TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A
$0.13
Available to order
Reference Price (USD)
10,800+
$0.13087
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic designs with BYG23M-M3/TR Single Rectifier Diodes by Vishay General Semiconductor - Diodes Division, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Vishay General Semiconductor - Diodes Division has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Diodes Incorporated
SBR20M150D1Q-13
Vishay General Semiconductor - Diodes Division
VS-40HFLR80S05
Taiwan Semiconductor Corporation
SS13LHRVG
Diotec Semiconductor
ES2JSMA
Microchip Technology
JANS1N5285-1/TR
Microchip Technology
UES1304E3/TR
Vishay General Semiconductor - Diodes Division
LL103A-GS18
Taiwan Semiconductor Corporation
TSSE3U60 RVG
Diodes Incorporated
RS1MB-13-F
Taiwan Semiconductor Corporation