Shopping cart

Subtotal: $0.00

BYT52M-TAP

Vishay General Semiconductor - Diodes Division
BYT52M-TAP Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.4A SOD57
$0.77
Available to order
Reference Price (USD)
5,000+
$0.21700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

SS2H9-M3/52T

Vishay General Semiconductor - Diodes Division

SD103CWS-HG3-18

Comchip Technology

CDBB140-HF

Vishay General Semiconductor - Diodes Division

BYS10-45-M3/TR

Panjit International Inc.

FR1A_R1_00001

Comchip Technology

CURB204-G

Vishay General Semiconductor - Diodes Division

VS-60EPU06HN3

Toshiba Semiconductor and Storage

CUHS20F40,H3F

Micro Commercial Co

MBR0560-TP

Microchip Technology

1N5550USE3

Top