BYWB29-200HE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
$0.76
Available to order
Reference Price (USD)
1+
$0.75900
500+
$0.75141
1000+
$0.74382
1500+
$0.73623
2000+
$0.72864
2500+
$0.72105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuitry with Vishay General Semiconductor - Diodes Division's BYWB29-200HE3_A/P Single Rectifier Diodes, tailored for seamless integration and high reliability. These diodes excel in applications such as voltage clamping, freewheeling, and reverse polarity protection. With features like high surge withstand capacity and low thermal resistance, they are a must-have for any electronics engineer. Vishay General Semiconductor - Diodes Division guarantees top-tier quality and performance. Ready to take the next step? Reach out for a detailed consultation!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -65°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
VS-6ESH02-M3/86A
Vishay General Semiconductor - Diodes Division
LL46-GS08
Nexperia USA Inc.
1PS79SB31,315
Infineon Technologies
BAS16E6433HTMA1
Taiwan Semiconductor Corporation
MUR340SBH
Global Power Technology-GPT
G3S06510A
Nexperia USA Inc.
1PS70SB10,115
NXP USA Inc.
BAS21/MI,215
Micro Commercial Co
US1ML-TP
onsemi