CA3127M
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANS 5NPN 15V 1.15GHZ 16SOIC
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Upgrade your RF designs with Renesas Electronics America Inc's CA3127M Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how CA3127M can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.15GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
- Gain: 27dB ~ 30dB
- Power - Max: 85mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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