CA3246M
Harris Corporation
Harris Corporation
HIGH FREQUENCIES NPN TRANSISTOR
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Upgrade your RF designs with Harris Corporation's CA3246M Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how CA3246M can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: 3GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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