CJ3139KDW-G
Comchip Technology
Comchip Technology
MOSFET 2PCH 20V 660MA SOT363
$0.40
Available to order
Reference Price (USD)
3,000+
$0.10584
6,000+
$0.09996
15,000+
$0.09114
30,000+
$0.08526
75,000+
$0.07820
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CJ3139KDW-G from Comchip Technology is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, CJ3139KDW-G offers the reliability you need. Contact us now to discuss how we can support your project requirements with Comchip Technology s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
- Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
- Power - Max: 150mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Fairchild Semiconductor
RFD3055LE_R4821
Rohm Semiconductor
SP8K80TB1
onsemi
NVMFD5C462NLWFT1G
onsemi
ECH8667-TL-H
Rohm Semiconductor
TT8M1TR
Diodes Incorporated
DMN2041LSD-13
Diodes Incorporated
DMN1002UCA6-7
Toshiba Semiconductor and Storage
SSM6N15AFE,LM
Diodes Incorporated
DMNH4015SSDQ-13
onsemi