CLF1G0035S-100
NXP USA Inc.
NXP USA Inc.
RF POWER FIELD-EFFECT TRANSISTOR
$202.89
Available to order
Reference Price (USD)
1+
$202.89000
500+
$200.8611
1000+
$198.8322
1500+
$196.8033
2000+
$194.7744
2500+
$192.7455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Trust CLF1G0035S-100 by NXP USA Inc. for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, CLF1G0035S-100 ensures reliability. Get in touch today to request a quote and see why NXP USA Inc. is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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