CSD13201W10
Texas Instruments
Texas Instruments
MOSFET N-CH 12V 1.6A 4DSBGA
$0.52
Available to order
Reference Price (USD)
3,000+
$0.13860
6,000+
$0.13020
15,000+
$0.12180
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with CSD13201W10, a high-quality Transistors - FETs, MOSFETs - Single from Texas Instruments. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, CSD13201W10 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DSBGA (1x1)
- Package / Case: 4-UFBGA, DSBGA
Related Products
onsemi
FDS6680AS
Infineon Technologies
IPB067N08N3GATMA1
Diodes Incorporated
DMN3066LQ-7
onsemi
FDMS7694
STMicroelectronics
STP57N65M5
Infineon Technologies
IPI65R310CFD
STMicroelectronics
STD15P6F6AG
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ4666B-F1-1100HF
Microchip Technology
APT5018SFLLG/TR
Diodes Incorporated