CSD17309Q3
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 20A/60A 8VSON
$1.24
Available to order
Reference Price (USD)
2,500+
$0.45640
Exquisite packaging
Discount
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CSD17309Q3 by Texas Instruments is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, CSD17309Q3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 8V
- Vgs(th) (Max) @ Id: 1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
- Package / Case: 8-PowerTDFN
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