CSD19501KCS
Texas Instruments
Texas Instruments
MOSFET N-CH 80V 100A TO220-3
$2.33
Available to order
Reference Price (USD)
1+
$2.00000
10+
$1.80700
50+
$1.61680
100+
$1.45820
500+
$1.14120
1,000+
$0.95100
2,500+
$0.91930
Exquisite packaging
Discount
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Optimize your electronic systems with CSD19501KCS, a high-quality Transistors - FETs, MOSFETs - Single from Texas Instruments. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, CSD19501KCS provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 217W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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