Shopping cart

Subtotal: $0.00

CSD19505KTT

Texas Instruments
CSD19505KTT Preview
Texas Instruments
MOSFET N-CH 80V 200A DDPAK
$3.76
Available to order
Reference Price (USD)
500+
$1.94770
1,000+
$1.65155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7920 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DDPAK/TO-263-3
  • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Related Products

Renesas Electronics America Inc

2SJ557-T1B-A

Vishay Siliconix

SUD19N20-90-T4-E3

Fairchild Semiconductor

FQB3N30TM

Vishay Siliconix

SIHG70N60EF-GE3

STMicroelectronics

STP5NK100Z

Vishay Siliconix

SQJ414EP-T1_BE3

Fairchild Semiconductor

HUF76419D3ST

Top