CSD19538Q2
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 14.4A 6WSON
$0.72
Available to order
Reference Price (USD)
1+
$0.72000
500+
$0.7128
1000+
$0.7056
1500+
$0.6984
2000+
$0.6912
2500+
$0.684
Exquisite packaging
Discount
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Upgrade your electronic designs with CSD19538Q2 by Texas Instruments, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, CSD19538Q2 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSON (2x2)
- Package / Case: 6-WDFN Exposed Pad
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