CSD19538Q3AT
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 15A 8VSON
$1.32
Available to order
Reference Price (USD)
250+
$0.45360
500+
$0.38746
750+
$0.34020
1,250+
$0.31185
Exquisite packaging
Discount
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Optimize your electronic systems with CSD19538Q3AT, a high-quality Transistors - FETs, MOSFETs - Single from Texas Instruments. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, CSD19538Q3AT provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSONP (3x3.3)
- Package / Case: 8-PowerVDFN
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