CSD25211W1015
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 3.2A 6DSBGA
$0.69
Available to order
Reference Price (USD)
3,000+
$0.18600
6,000+
$0.17400
15,000+
$0.16800
Exquisite packaging
Discount
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Enhance your circuit performance with CSD25211W1015, a premium Transistors - FETs, MOSFETs - Single from Texas Instruments. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust CSD25211W1015 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DSBGA (1x1.5)
- Package / Case: 6-UFBGA, DSBGA
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