CSD25481F4T
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 2.5A 3PICOSTAR
$0.93
Available to order
Reference Price (USD)
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$0.93000
500+
$0.9207
1000+
$0.9114
1500+
$0.9021
2000+
$0.8928
2500+
$0.8835
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose CSD25481F4T by Texas Instruments. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with CSD25481F4T inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 88mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
- Vgs (Max): -12V
- Input Capacitance (Ciss) (Max) @ Vds: 189 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PICOSTAR
- Package / Case: 3-XFDFN
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