CSD85312Q3E
Texas Instruments
Texas Instruments
MOSFET 2N-CH 20V 39A 8VSON
$1.34
Available to order
Reference Price (USD)
2,500+
$0.38220
Exquisite packaging
Discount
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Optimize your electronic circuits with Texas Instruments s CSD85312Q3E, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how CSD85312Q3E can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Logic Level Gate, 5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-VSON (3.3x3.3)
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