CSD86311W1723
Texas Instruments
Texas Instruments
MOSFET 2N-CH 25V 4.5A 12DSBGA
$0.48
Available to order
Reference Price (USD)
3,000+
$0.45920
Exquisite packaging
Discount
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Discover high-performance CSD86311W1723 from Texas Instruments, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Texas Instruments s CSD86311W1723 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-UFBGA, DSBGA
- Supplier Device Package: 12-DSBGA
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