CY7C1327G-133BGC
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 256KX18, 4NS
$3.71
Available to order
Reference Price (USD)
1+
$3.71000
500+
$3.6729
1000+
$3.6358
1500+
$3.5987
2000+
$3.5616
2500+
$3.5245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Trust Rochester Electronics, LLC CY7C1327G-133BGC Memory ICs for all your critical storage needs, offering industry-leading technology. Designed for applications in military, healthcare, and telecommunications, these ICs feature secure data retention, high cycle endurance, and broad compatibility. Rochester Electronics, LLC CY7C1327G-133BGC sets the standard in memory innovation. Place your inquiry now and benefit from our expertise and support!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4 ns
- Voltage - Supply: 3.15V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
Related Products
STMicroelectronics
M95M04-DWMN3TP/V
Fairchild Semiconductor
FM93C46AVM8
Renesas Electronics America Inc
M30082040054X0PSAR
Infineon Technologies
CY7C1470V33-167BZXI
Microchip Technology
SST39SF010A-70-4I-NHE
Infineon Technologies
CY62147G18-55BVXI
IBM
043641RLAD-6
Adesto Technologies
AT25XE021A-MHN-Y
Micron Technology Inc.
MT29F384G08EBHBBJ4-3R:B TR
ISSI, Integrated Silicon Solution Inc