CY7C1351B-100BGC
Rochester Electronics, LLC
Rochester Electronics, LLC
ZBT SRAM, 128KX36, 8.5NS
$4.31
Available to order
Reference Price (USD)
1+
$4.31000
500+
$4.2669
1000+
$4.2238
1500+
$4.1807
2000+
$4.1376
2500+
$4.0945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with Rochester Electronics, LLC CY7C1351B-100BGC Memory ICs, known for their superior performance and versatility. Suitable for medical equipment, aerospace, and industrial automation, these ICs feature high endurance, secure data storage, and rapid read/write capabilities. Rochester Electronics, LLC CY7C1351B-100BGC stands for innovation and quality. Request a sample or quote now and take the first step toward optimizing your memory solutions!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
Related Products
Infineon Technologies
S27KL0641DABHA030
onsemi
CAT34C02VP2I-GT4
ISSI, Integrated Silicon Solution Inc
IS25WP128-JBLE
Infineon Technologies
S25FL128SAGMFIR11
Texas Instruments
JBP28L22MJ
Rochester Electronics, LLC
CY7C1223F-133AC
Renesas Electronics America Inc
71V3558SA166BQG
Microchip Technology
AT28LV010-20TU-630
Microchip Technology
24LC04BH-I/P
Infineon Technologies