CY7C1363B-117BGC
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 512KX18, 7.5NS
$8.48
Available to order
Reference Price (USD)
1+
$8.48000
500+
$8.3952
1000+
$8.3104
1500+
$8.2256
2000+
$8.1408
2500+
$8.056
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your system's efficiency with Rochester Electronics, LLC CY7C1363B-117BGC Memory ICs, designed for high-demand environments. Ideal for AI, machine learning, and edge computing, these ICs provide ultra-fast processing, error resilience, and compact form factors. Rochester Electronics, LLC CY7C1363B-117BGC is synonymous with excellence in memory technology. Reach out to us now for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 117 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
Related Products
Infineon Technologies
S25FL256LAGMFV000
onsemi
CAT24C02ZI-GT3A
ABLIC Inc.
S-24C02DI-J8T1U5
ISSI, Integrated Silicon Solution Inc
IS25WP064A-RMLE-TR
Microchip Technology
25LC1024T-I/MF
Flip Electronics
CY7C1046D-10VXI
Microchip Technology
24AA515T-I/SM
Infineon Technologies
S29GL128S10TFI020
STMicroelectronics
M95128-DRMN3TP/K
Swissbit