CY7C1387BV25-150BGC
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 1MX18, 3.8NS
$48.07
Available to order
Reference Price (USD)
1+
$48.07000
500+
$47.5893
1000+
$47.1086
1500+
$46.6279
2000+
$46.1472
2500+
$45.6665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your system's efficiency with Rochester Electronics, LLC CY7C1387BV25-150BGC Memory ICs, designed for high-demand environments. Ideal for AI, machine learning, and edge computing, these ICs provide ultra-fast processing, error resilience, and compact form factors. Rochester Electronics, LLC CY7C1387BV25-150BGC is synonymous with excellence in memory technology. Reach out to us now for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 150 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.8 ns
- Voltage - Supply: 2.375V ~ 2.625V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
Related Products
Infineon Technologies
S34ML02G100BHI000
Winbond Electronics
W25N512GVEIT TR
Microchip Technology
SST39VF801C-70-4C-B3KE-T
Microchip Technology
AT25128B-MAHL-E
Infineon Technologies
CY7C1413KV18-300BZC
Flip Electronics
CY7C09269V-9AXC
Infineon Technologies
S29GL256P90FAIR23
Macronix
MX25L4006EM2I-12G
Microchip Technology
93LC66C-E/MS
Alliance Memory, Inc.